PK648BA
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.
4mΩ @VGS = 10V
ID 75A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
75 47 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
19.
8 15.
8
Avalanche Current
IAS 37
Avalanche Energy
L =0.
1mH
EAS
71
Power Dissipation
TC = 25 °C TC = 100 °C
PD
35 14
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
4 1.
5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W...