DFN2020-6
PMC85XP
30 V P-channel
MOSFET with pre-biased NPN transistor
15 May 2013
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench
MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits
• Trench
MOSFET technology • NPN transistor built-in bias resistors • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm • Exposed drain pad for excellent thermal conduction
3.
Applications
• Charging switch for portable devices • High-side load switch • USB port over
voltage protection • Power ma...