PMCM6501VNE
12 V, N-channel Trench
MOSFET
26 August 2015
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench
MOSFET technology.
2.
Features and benefits
• Low threshold
voltage • Ultra small package: 0.
98 × 1.
48 × 0.
35 mm • Trench
MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-s...