PMDPB56XNEA
30 V, dual N-channel Trench
MOSFET
19 April 2016
Product data sheet
1.
General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Low threshold
voltage • Leadless medium power SMD plastic package: 2 × 2 × 0.
65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection 2 kV HBM • AEC-Q101 qualified
3.
Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
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