PMF63UNE
20 V, N-channel Trench
MOSFET
20 April 2016
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Low threshold
voltage • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Condi...