PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench
MOSFET
28 March 2014
Product data sheet
1.
General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Very fast switching • Trench
MOSFET technology • 2 kV ESD protection • AEC-Q101 qualified
3.
Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits • Automotive applications
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS...