PMH600UNE
20 V, N-channel Trench
MOSFET
8 March 2019
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Low threshold
voltage • Very fast switching • Trench
MOSFET technology • ElectroStatic Discharge (ESD) protection 1 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.
62 x 0.
62 x 0.
37 mm
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-so...