PMN52XP
20 V, P-channel Trench
MOSFET
29 January 2016
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Low threshold
voltage • Enhanced power dissipation capability of 1240 mW
3.
Applications
• Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tj = 25 °C
- - -20 V
VGS gate-source
voltage
-12 -
12 V
ID
drain current
VG...