PMPB10XNEA
20 V, N-channel Trench
MOSFET
27 March 2018
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Low threshold
voltage • Trench
MOSFET technology • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection 1 kV HBM (class H1C) • AEC-Q101 qualified
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage...