PMV27UPE
20 V, P-channel Trench
MOSFET
15 May 2014
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Low threshold
voltage • Very fast switching • Enhanced power dissipation capability: Ptot = 980 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• LED driver • Power management • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tj = 25 °C
-...