PMV48XPA
20 V, P-channel Trench
MOSFET
10 March 2014
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Logic-level compatible • Trench
MOSFET technology • Very fast switching • AEC-Q101 qualified
3.
Applications
• High-side loadswitch • High-speed line driver • Relay driver • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tamb = 25 °C
- - -20 V
VGS gate-source
voltage
-12 -
12 V
ID
drain current
VGS = ...