PMV65UNEA
20 V, N-channel Trench
MOSFET
17 March 2017
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Low threshold
voltage • Enhanced power dissipation capability of 940 mW • ElectroStatic Discharge (ESD) protection 2KV HBM • AEC-Q101 qualified
3.
Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
St...