PMXB360ENEA
80 V, N-channel Trench
MOSFET
5 July 2018
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection 2 kV HBM • AEC-Q101 qualified
3.
Applications
• Relay driver • Power management in automotive and industrial applications • LED driver • DC-to-DC converter
4.
Quick reference...