PMXB65UPE
12 V, P-channel Trench
MOSFET
8 July 2014
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1.
5 kV HBM • Drain-source on-state resistance RDSon = 59 mΩ • Very low gate-source threshold
voltage for portable applications VGS(th) = -0.
68 V
3.
Applications
• High-side load switch and charg...