PMZB350UPE
20 V, single P-channel Trench
MOSFET
1 August 2012
Product data sheet
1.
Product profile
1.
1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.
2 Features and benefits • Low threshold
voltage • Very fast switching • Trench
MOSFET technology • 1.
8 kV ESD protected
1.
3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
1.
4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tj = 25 °C
- - -20 V
VGS gate-sou...