PMZB600UNEL
20 V, N-channel Trench
MOSFET
5 December 2016
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Low leakage current • Leadless ultra small SMD plastic package: 1.
0 × 0.
6 × 0.
37 mm • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage
...