Phototransistors
PN163NC
Silicon NPN Phototransistor
3.
5±0.
3 Gate the rest 2.
4 1.
1 0.
8 max.
1.
1 0.
8
Unit : mm
3.
0±0.
3 1.
95±0.
25 1.
4±0.
2 0.
9 0.
5
For optical control systems Features
High sensitivity Fast response : tr = 4 µs (typ.
) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package
ø1.
1 R0.
5
12 min.
Not soldered 2.
15 max.
2-0.
5±0.
15
0.
3±0.
15
2
2.
54
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter
voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +85 –30 to +100 Unit V mA mW ˚C ˚C
1: Collector 2: Emitter
Electro-Optical Chara...