PN3640 / MMBT3640
Discrete POWER & Signal Technologies
PN3640
MMBT3640
C
E C B
TO-92
E
SOT-23
Mark: 2J
B
PNP Switching Transistor
This device is designed for very high speed saturate switching at collector currents to 100 mA.
Sourced from Process 65.
See PN4258 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12 12 4.
0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may b...