Phototransistors
PNZ109L
Silicon NPN Phototransistor
ø4.
6±0.
15
Unit : mm
Glass lens
For optical control systems Features
High sensitivity : ICE(L) = 3.
5 mA (min.
) (at L = 100 lx)
12.
7 min.
6.
3±0.
3
Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.
) Fast response : tr = 5 µs (typ.
) Long lifetime, high reliability
3-ø0.
45±0.
05 2.
54±0.
25
0 0± 1.
.
2 .
1 5
3˚ 45±
1.
0± 0
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter
voltage Collector to base
voltage Emitter to collector
voltage Emitter to base
voltage Collector current Collector power dissipation Operati...