Phototransistors
PNZ150L
Silicon NPN Phototransistor
Unit : mm
ø3.
5±0.
2
4.
8±0.
3 2.
4 2.
4 Not soldered
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package
4.
5±0.
3
4.
2±0.
3 2.
3 1.
9
42.
7±1.
0 2.
2 14.
5 2.
95
1.
0
2-1.
12 2-0.
45±0.
15 0.
4±0.
15 2-0.
6±0.
15 2-0.
45±0.
15
1.
2
1
2 2.
54 R1.
75
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter
voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 100 –25 to +85 –30 to +100 Unit V mA mW ˚C ˚C
1: Emitter 2: Collector
Electro-Optic...