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PPNGZ52F120A

Part Number PPNGZ52F120A
Manufacturer Microsemi Corporation
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published May 9, 2005
Detailed Description PPC INC. 7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52...
Datasheet PPNGZ52F120A




Overview
PPC INC.
7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52F120A Features • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.
2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL...






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