PSMN2R2-40YSD
40 V standard level
MOSFET
8 July 2019
Preliminary data sheet
1.
General description
Standard level gate drive N-channel enhancement mode
MOSFET.
2.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig.
2 Tmb = 25 °C; Fig.
1
[1]
VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig.
9
ID = 25 A; VDS = 20 V; VGS = 10 V; Fig.
11; Fig.
12
Min Typ Max Unit
- - 40 V
- - 120 A...