PSMN3R5-40YSD
N-channel 40 V, 3.
5 mΩ, 120 A standard level
MOSFET in
LFPAK56 using NextPower-S3 Schottky-Plus technology
2 October 2018
Product data sheet
1.
General description
120 A, standard level gate drive N-channel enhancement mode
MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Features and benefits
• 120 A capability • Avalanche rated, 100% tested at I(AS) = 120 A • NextPower-S3 technology delivers 'superfast switching with soft recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs • Schottky-Plus body-diode, gives soft ...