PSMN7R0-30YLC
N-channel 30 V 7.
1 mΩ logic level
MOSFET in LFPAK using NextPower technology
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD gate-drain charge
VGS = 4.
5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15
QG(tot) total gate charge
VGS = 4.
5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15
Min Typ Max Unit - 2.
5 - nC - 7.
9 - nC
2.
Pinning information
Table 2.
Pin 1 2 3 4 mb
Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain
3.
Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D
G mbb076 S
Table 3.
Ordering info...