PSMN9R1-30YL
N-channel 9.
1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev.
2 — 16 May 2011
Product data sheet
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Product profile
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1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
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2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
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3 Applications
Class-D
amplifiers DC-to-DC converters
Motor control Server power supplies
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4 Quick reference data
Table 1.
Symbol VDS ID
Quick reference data Parameter drain-sourc...