Part Number
|
PTB20017 |
Manufacturer
|
Ericsson |
Description
|
150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
Published
|
Apr 16, 2005 |
Detailed Description
|
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PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common e...
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Datasheet
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PTB20017
|
Overview
e
PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band.
Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
150 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
240
Output Power (Watts)
200 160 120 80...
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