e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz.
Rated at 8 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • • • • • Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.
0 dB Min.
at 8 Watts Gold Metallization Silicon Nitride Passivated Typical Gain & Return Loss vs.
Frequency 10 8 Gain (dB) (as measured in a broadband circuit) VCC = 22 V Pin = 2.
0 W 0 Ret...

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