e PTB 20180 2.
5 Watts, 1.
8–2.
0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.
8 to 2.
0 GHz.
Rated at 2.
5 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • • • • • 2.
5 Watts, 1.
8–2.
0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs.
Input Power 1.
0 Output Power (Watts) 0.
8 0.
6 0.
4 20 18 0 LO TC OD E VCC = 26...

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