DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23002U NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance.
APPLICATIONS Common-base, class C power
amplifiers at frequencies up to 2.
3 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave pow...