Part Number
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PTFA092201F |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FETs |
Published
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Aug 6, 2013 |
Detailed Description
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PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz
Description
The PTFA092201E and...
|
Datasheet
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PTFA092201F
|
Overview
PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz
Description
The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA092201E Package H-36260-2
PTFA092201F Package H-37260-2
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.
1 dB, 10 MHz carrier spacing, 3.
84 MHz bandwidth
60 50 -30
Features
• • •
IMD (dBc), ACPR (dBc)
Pb-free, RoHS-compliant and thermally-enhanced packages Broadband i...
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