Part Number
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PTFB182503EL |
Manufacturer
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Infineon Technologies |
Description
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Thermally-Enhanced High Power RF LDMOS FETs |
Published
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Feb 27, 2015 |
Detailed Description
|
PTFB182503EL PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz
Description
The PTFB18250...
|
Datasheet
|
PTFB182503EL
|
Overview
PTFB182503EL PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB182503EL H-33288-6
PTFB182503FL H-34288-4/2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.
85 A, ƒ = 184...
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