Power Transistor Arrays (F-MOS FETs)
PUB4702
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-
voltage drive q Incorporating built-in zener diodes
1.
65±0.
2 9.
5±0.
2
unit: mm
25.
3±0.
2
4.
0±0.
2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
4.
4±0.
5
8.
0
s Applications
0.
5±0.
15 1.
0±0.
25 2.
54±0.
2 9!2.
54=22.
86±0.
25
0.
8±0.
25 0.
5±0.
15
C1.
5±0.
5
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown
voltage Gate to Source
voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch...