PZP003BYB
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6Ω @VGS = 4V
ID 110mA
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 100 °C
ID IDM
110 70 400
Avalanche Current
IAS 300
Avalanche Energy
L = 0.
1mH
EAS
0.
5
Power Dissipation
TA = 25 °C TA = 100 °C
PD
150 60
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
mA
mJ mW °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Limited by maximum junction temperature.
2Limited by package.
SYMBOL RqJ...