BCR 148S
NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvaniv) internal isolated Transistors driver circuit • Built in bias resistor (R1=47kΩ, R2=47KΩ)
Type BCR 148S
Marking Ordering Code Pin Configuration WEs
Package
Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Input on
Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 50 70 250 150 - 65 .
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+ 140 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
Rt...