QS6M3
Transistors
Small switching
QS6M3
zFeatures 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
zExternal dimensions (Unit : mm)
TSMT6
1pin mark
(1)
2.
8 1.
6
(6)
0.
4
(3)
Each lead has same dimensions
Abbreviated symbol : MO3
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source
voltage Gate-source
voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
zEquivalent circuit
Limits Unit Tr1 : Nch Tr2 : Pch 30 −20 V 12 −12 V ±1.
5 ±1.
5 A ±6.
0 ±6.
0 A ∗1 0.
8 −0.
75 A 6.
0 −6.
0 A...