RB215T-40
Diodes
Schottky barrier diode
RB215T-40
zApplications Switching power supply zExternal dimensions (Unit : mm)
4.
5±0.
3 0.
1
zStructure
①
1.
3 0.
8 (1) (2) (3)
13.
5MIN
zConstruction Silicon epitaxial planar
1.
2
5.
0±0.
2
8.
0±0.
2 12.
0±0.
2
zFeatures 1) Cathode common dual type.
(TO-220) 2) Low IR 3) High reliability
10.
0±0.
3 0.
1
2.
8±0.
2 0.
1
15.
0±0.
4 0.
2 8.
0 0.
7±0.
1 0.
05
2.
6±0.
5
ROHM : ＴO220FN ① Manufacture Date
zAbsolute maximum ratings (Ta=25°C)
Parameter Forward
voltage (repetitive peak) Forward
voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 ...