MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
9.
1+/-0.
7 1.
3+/-0.
4 3.
6+/-0.
2
Silicon
MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power
amplifiers applications.
OUTLINE DRAWING
3.
2+/-0.
4
4.
8MAX
9+/-0.
4
•High power gain: Pout6W, Gp16dB @Vdd=12.
5V,f=30MHz
12.
3+/-0.
6
FEATURES
2
For output stage of high power
amplifiers in HF band mobile radio sets.
12.
3MIN
APPLICATION
1.
2+/-0.
4 0.
8+0.
10/-0.
15
1 2 3
0.
5+0.
10/-0.
15 2.
5 2.
5 3.
1+/-0.
6 4.
5+/-0.
5
5deg
PIN 1.
Gate 2.
Source 3.
Drain UNIT:mm
9.
5MAX
ABSOLUTE MAXIMUM RATINGS
com
(Tc=25°C UNLESS OTHERWISE ...