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RD16HHF1

Part Number RD16HHF1
Manufacturer Mitsubishi Electric
Description Silicon MOSFET Power Transistor
Published Jul 1, 2008
Detailed Description Silicon RF Power MOS FET (Discrete) RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION...
Datasheet RD16HHF1





Overview
Silicon RF Power MOS FET (Discrete) RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES High power gain: Pout16W, Gp16dB @Vds=12.
5V,f=30MHz Integrated gate protection diode 12.
3+/-0.
6 3.
2+/-0.
4 4.
8MAX 9+/-0.
4 OUTLINE DRAWING 9.
1+/-0.
7 3.
6+/-0.
2 2 1.
2+/-0.
4 0.
8+0.
10/-0.
15 1.
3+/-0.
4 12.
3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.
123 2.
5 2.
5 5deg 0.
5+0.
10/-0.
15 3.
1+/-0.
6 4.
5 +/- 0.
5 RoHS COMPLIANT RD16HHF1-501 is a RoHS compliant product.
PINS 1: GAT E 9.
5MAX 2:SOURCE note: 3:DRAIN Torelance ...






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