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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
DRAWING
22.
0+/-0.
3 18.
0+/-0.
3 7.
2+/-0.
5 7.
6+/-0.
3 4-C1
RoHS Compliance, DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power
amplifiers applications.
Silicon
MOSFET Power Transistor,175MHz,30W
OUTLINE
High power gain: Pout30W, Gp14.
7dB @Vdd=12.
5V,f=175MHz High Efficiency: 60%typ.
2 3
R1.
6
14.
0+/-0.
4
6.
6+/-0.
3
FEATURES
1
APPLICATION
For output stage of high power
amplifiers in VHF band Mobile radio sets.
2.
3+/-0.
3
2.
8+/-0.
3 0.
10
3.
0+/-0.
4
5.
1+/-0.
5
PIN 1.
Drain 2.
Source 3.
Gate UNIT:mm
RoHS COMPLIANT
RD30HVF1-101 is a RoHS c...