RF1K49090
Data Sheet January 2002
3.
5A, 12V, 0.
050 Ohm, Logic Level, Dual N-Channel LittleFETâ„¢ Power
MOSFET
This Dual N-Channel power
MOSFET is manufactured using an advanced MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low
voltage bus switches.
This product achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
Formerly develo...