RFD20N03, RFD20N03SM
Data Sheet July 1999 File Number
4350.
1
20A, 30V, 0.
025 Ohm, N-Channel Power
MOSFETs
The RFD20N03 and RFD20N03SM N-Channel power
MOSFETs are manufactured using the MegaFET process.
This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49235.
Features
• 20A, 30V • rDS(ON) = 0.
025Ω • Temperature Compensating PSPICE® Model • Thermal Impedance S...