Semiconductor
RFM12N18, RFM12N20, RFP12N18, RFP12N20
12A, 180V and 200V, 0.
250 Ohm, N-Channel Power
MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09293.
BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20
G
September 1998
Features
• 12A, 180V and 200V • rDS(ON) = 0.
250Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Component...