RFP8N20L
Data Sheet July 1999 File Number
1514.
3
8A, 200V, 0.
600 Ohm, Logic Level, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply
voltages.
Formerly developmental type TA09534.
Features
• 8A, 200V • rDS(ON) = 0.
600Ω • Design Optimized for 5V Gate Drives • Can...