Part Number | RJH60M0DPQ-A0 |
Manufacturer | Renesas |
Title | IGBT |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ... |
Features |
Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 30... |
Published | Jul 20, 2012 |
Datasheet |
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