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RJH60M0DPQ-A0

Part Number RJH60M0DPQ-A0
Manufacturer Renesas
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ...
Features
 Short circuit withstand time (8 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching tf = 80 ns typ. (at VCC = 30...

Published Jul 20, 2012
Datasheet RJH60M0DPQ-A0 PDF File










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