RJK03M3DPA
30V, 40A, 3.
9mΩmax.
N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5678 4321
4 G
Preliminary Datasheet
R07DS0767EJ0200 Rev.
2.
00
Feb 12, 2013
5 678 D DDD
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature...