Preliminary Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.
4 mΩ max.
MOS2 30 V, 30 A, 5.
3 mΩ max.
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
R07DS0906EJ0110 Rev.
1.
10
Nov 01, 2012
Features
Low on-resistance Capable of 4.
5 V gate drive High density mounting Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3))
5 678
1 G1
234 D1 D1 D1
8 G2
4 32 1
MOS1
9 S1/D2
5678
9
S2 S2 S2 56 7
4321 (Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source
voltage Gate to source
voltage Drain current Drain peak current Reverse drain curre...