RJK0406JPE
Silicon N Channel MOS FET High Speed Power Switching
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 1.
65 m typ.
High current devices : ID = 160 A Low input capacitance : Ciss = 6300 pF typ
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW 10 s, duty cycle 1%
2.
Tch = 25C, Rg 50 3.
Tc = 25C 4.
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