RJK0822SPN
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 7.
9mΩ typ.
(at VGS = 10V)
• High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
Rev.
1.
00 September.
26.
2007
Note: This product is designed for Electric Bike (E-Bike) application in China market.
Rev.
1.
00, September.
26.
2007, page 1 of 7
RJK0822SPN
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source
voltage
VDSS
Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VGSS
ID ID(pulse)Note1
IDR Pch Note2
Channel temperature
Tch
Storage tempe...