RJK0851DPB
80V, 20A, 23m max.
Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0079EJ0200 Rev.
2.
00
Apr 09, 2013
Functions
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 18 m typ.
(at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
5 D
4 1, 2, 3 Source G 4 Gate
5 Drain
SSS 123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation...