Preliminary Datasheet
RJP30H2DPK-M0 / RJP30H2A
Silicon N Channel IGBT High speed power switching
R07DS0467EJ0200 Rev.
2.
00
Jun 15, 2011
Features
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation
voltage: VCE(sat) = 1.
4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG)
4
C
1 23
1.
Gate 2.
Collector G 3.
Emitter 4.
Collector (Flange)
E
Absolute Maximum Ratings
Item Collector to Emitter
voltage Gate to Emitter
voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temper...